SKU Details
SKU000829
DRV8300DPWR three-phase gate driver
Locations
| Bin | Identifier | Quantity | Type |
|---|
Properties
name
DRV8300DPWR three-phase gate driver
item_type
Electronic component
component_function
Gate driver
manufacturer
Texas Instruments
part_number
DRV8300DPWR
channel_count
6
package
SMD (other)
package_designation
TSSOP-20 (PW), not HTSSOP
terminal_count
20
package_length
{"value":6.4,"unit":"mm"}
package_width
{"value":4.4,"unit":"mm"}
supply_voltage_min
{"value":5,"unit":"V"}
supply_voltage_max
{"value":20,"unit":"V"}
gate_driver_topology
Three-phase high-side / low-side N-channel MOSFET gate driver
half_bridge_count
3
high_side_operating_voltage_max
{"value":85,"unit":"V"}
gate_source_peak_current_typical
{"value":0.75,"unit":"A"}
gate_sink_peak_current_typical
{"value":1.5,"unit":"A"}
dead_time_typical
{"value":200,"unit":"ns"}
bootstrap_diode_configuration
Integrated bootstrap diodes (D variant); external capacitors required
specification_basis
Exact-part datasheet
datasheet_url
https://www.ti.com/lit/ds/symlink/drv8300.pdf
electrical_rating_conditions
Recommended GVDD5–20 V and SHx−2 to85 V; manufacturer markets100 V class but recommended switch-node upper limit is85 V (110 V absolute maximum is not an operating rating). Gate-current values are typical peak pulse drive, not motor current, measured with12 V gate-drive conditions.200 ns fixed deadtime for PW/TSSOP. Listed length/width are nominal body dimensions.
Description
Individual three-half-bridge driver IC for external N-channel MOSFETs; needs external power stage, MCU PWM and bootstrap capacitors. DPW is integrated-diode, non-inverting INL variant. CSV says20HTSSOP; TI ordering table specifies TSSOP20/PW, used here.
Created through automation
true
Automation source or version
Inventory Assistant 0.1.0+codex.20260919214048; gpt-6.1-sol (host report)
Derived Batches
- BAT000851DRV8300DPWR three-phase gate driverName from SKU
Codes
296-DRV8300DPWRCT-ND
Associated