DRV8300DPWR three-phase gate driver
Batch BAT000851 · of SKU000829
This batch
BAT000851
Locations
| Bin | Identifier | Quantity | Type |
|---|
Physical quantity evidence
No uncertain physical quantities.
Codes
NoneBatch properties
source
DigiKey
order_line
3
supplier_part_number
296-DRV8300DPWRCT-ND
original_ordered_quantity
3
cost_per_unit
{"value":1.12,"unit":"$"}
order_line_amount
{"value":3.36,"unit":"$"}
Description
DigiKey sales order 101877460, invoice 133459862, order date 2026-09-27. Packing list #1, document date 2026-09-28; web order ID 376586465. Evidence: DK_PACKLIST_133459862.pdf and DK_PRODUCTS_101877460.csv, matched line 3 (296-DRV8300DPWRCT-ND; manufacturer part DRV8300DPWR). Ordered and shipped 3 supplier sale units; no backorder. CSV unit price $1.12000; line amount $3.36. Customer reference: FOC THREE PHASE GATE DRIVER. Supplier-reported date code: Dec-2021. Supplier-reported lot code: 2311075MY2. Full original quantity remains present per owner. Function/individual markings untested. Document date is not a verified ship date.
Created through automation
true
Automation source or version
Inventory Assistant 0.1.0+codex.20260919214048; gpt-6.1-sol (host report)
order_number
101877460
invoice_number
133459862
purchase_date
2026-09-27
original_shipped_quantity
3
Shared details from SKU000829
DRV8300DPWR three-phase gate driver
These details belong to the SKU and are shared by its batches.
Individual three-half-bridge driver IC for external N-channel MOSFETs; needs external power stage, MCU PWM and bootstrap capacitors. DPW is integrated-diode, non-inverting INL variant. CSV says20HTSSOP; TI ordering table specifies TSSOP20/PW, used here.
Shared properties (24)
item_type
Electronic component
component_function
Gate driver
manufacturer
Texas Instruments
part_number
DRV8300DPWR
channel_count
6
package
SMD (other)
package_designation
TSSOP-20 (PW), not HTSSOP
terminal_count
20
package_length
6.4 mm
package_width
4.4 mm
supply_voltage_min
5 V
supply_voltage_max
20 V
gate_driver_topology
Three-phase high-side / low-side N-channel MOSFET gate driver
half_bridge_count
3
high_side_operating_voltage_max
85 V
gate_source_peak_current_typical
0.75 A
gate_sink_peak_current_typical
1.5 A
dead_time_typical
200 ns
bootstrap_diode_configuration
Integrated bootstrap diodes (D variant); external capacitors required
specification_basis
Exact-part datasheet
datasheet_url
https://www.ti.com/lit/ds/symlink/drv8300.pdf
electrical_rating_conditions
Recommended GVDD5–20 V and SHx−2 to85 V; manufacturer markets100 V class but recommended switch-node upper limit is85 V (110 V absolute maximum is not an operating rating). Gate-current values are typical peak pulse drive, not motor current, measured with12 V gate-drive conditions.200 ns fixed deadtime for PW/TSSOP. Listed length/width are nominal body dimensions.
Created through automation
true
Automation source or version
Inventory Assistant 0.1.0+codex.20260919214048; gpt-6.1-sol (host report)